Physical model for the low-dose-rate effect in bipolar devices

被引：60
作者：
Boch, J. [1 ]
Saigne, F.
Schrimpf, R. D.
Vaille, J. -R.
Dusseau, L.
Lorfevre, E.
机构：
[1] Univ Montpellier 2, CEM2, F-34095 Montpellier 5, France
[2] Vanderbilt Univ, Nashville, TN 37235 USA
[3] Ctr Natl Etud Spatiales, F-31055 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期
关键词：
bipolar junction transistor; enhanced low-dose-rate sensitivity (ELDRS); elevated temperature irradiation; initial recombination; switching experiment; total dose;
D O I：
10.1109/TNS.2006.886008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physical model of the dose-rate effect in bipolar junction transistors is proposed, based on competition between trapping and recombination of radiation-induced carriers in the oxide. The initial recombination of the carriers is considered in this model, taking into account the temperature effect. The general trends obtained with this model are in very good agreement with experimental data. It is also shown that the, dose rate effect depends significantly on oxide quality.
引用
收藏
页码：3655 / 3660
页数：6
相关论文
共 34 条
  • [1] Ausman, 1987, HDLTR2097
  • [2] Dose rate effects in bipolar oxides: Competition between trap filling and recombination
    Boch, J.
    Saigne, F.
    Touboul, A. D.
    Ducret, S.
    Carlotti, J. -F.
    Bernard, M.
    Schrimpf, R. D.
    Wrobel, F.
    Sarrabayrouse, G.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (23)
  • [3] Temperature effect on geminate recombination
    Boch, J.
    Saigne, F.
    Dusseau, L.
    Schrimpf, R. D.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (04)
  • [4] Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments
    Boch, J
    Saigné, F
    Schrimpf, RD
    Vaillé, JR
    Dusseau, L
    Ducret, S
    Bernard, M
    Lorfèvre, E
    Chatry, C
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) : 2616 - 2621
  • [5] Effect of switching from high to low dose rate on linear bipolar technology radiation response
    Boch, J
    Saigné, F
    Schrimpf, RD
    Fleetwood, DM
    Ducret, S
    Dusseau, L
    David, JP
    Fesquet, J
    Gasiot, J
    Ecoffet, R
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) : 2896 - 2902
  • [6] Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs
    Boch, J
    Saigné, R
    Schrimpf, RD
    Fleetwood, DM
    Cizmarik, R
    Zander, D
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) : 2903 - 2907
  • [7] TIME-DEPENDENT HOLE AND ELECTRON TRAPPING EFFECTS IN SIMOX BURIED OXIDES
    BOESCH, HE
    TAYLOR, TL
    HITE, LR
    BAILEY, WE
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1982 - 1989
  • [8] SOLUTION OF THE KINETIC-EQUATIONS GOVERNING TRAP FILLING - CONSEQUENCES CONCERNING DOSE DEPENDENCE AND DOSE-RATE EFFECTS
    CHEN, R
    MCKEEVER, SWS
    DURRANI, SA
    [J]. PHYSICAL REVIEW B, 1981, 24 (09): : 4931 - 4944
  • [9] Nonlinear dose dependence and dose-rate dependence of optically stimulated luminescence and thermoluminescence
    Chen, R
    Leung, PL
    [J]. RADIATION MEASUREMENTS, 2001, 33 (05) : 475 - 481
  • [10] Durrani S. A., 1978, EUROP PACT J, V2, P200
1234