Theory and experiments of a tunable wavelength-selective photodetector based on a taper cavity

被引:24
作者
Huang, Hui [1 ]
Ren, Xiaomin [1 ]
Wang, Xingyan [1 ]
Cui, Hailin [1 ]
Wang, Wenjuan [1 ]
Miao, Ang [1 ]
Li, Yiqun [1 ]
Wang, Qi [1 ]
Huang, Yongqing [1 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Telecommun Engn, Opt Commun Ctr, Beijing 100876, Peoples R China
关键词
D O I
10.1364/AO.45.008448
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a wavelength-selective photodetector that combines a Fabry-Perot filtering cavity (FPC) with a taper absorption cavity (TAC). The taper cavity shows a nonresonant effect but exhibits an absorption enhancement effect, so that high speed, high quantum efficiency, wide tuning range, and an ultranarrow spectral linewidth can be achieved simultaneously. Device performance was theoretically investigated by including key factors such as taper angle, finite-size diffracting-beam input, and lateral walk-off in the taper cavity. The device was fabricated by bonding a GaAs-based FPC, which can be tuned via thermal-optic effect, with an InP-based TAC. An integrated device with a spectral linewidth of 0.6 nm (FWHM), a wavelength tuning range of 10.2 nm (1518.0-1528.2 nm), a 3 dB bandwidth of 12 GHz, and a quantum efficiency of similar to 70% was demonstrated, and the absorption layer thickness is only 0.3 mu m. (c) 2006 Optical Society of America.
引用
收藏
页码:8448 / 8453
页数:6
相关论文
共 20 条
[1]   RASTERED, UNIFORMLY SEPARATED WAVELENGTHS EMITTED FROM A 2-DIMENSIONAL VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY [J].
CHANGHASNAIN, CJ ;
WULLERT, JR ;
HARBISON, JP ;
FLOREZ, LT ;
STOFFEL, NG ;
MAEDA, MW .
APPLIED PHYSICS LETTERS, 1991, 58 (01) :31-33
[2]   Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm [J].
Della Corte, FG ;
Cocorullo, G ;
Iodice, M ;
Rendina, I .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1614-1616
[3]   Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector [J].
Deppe, DG ;
Kudari, A ;
Huffaker, DL ;
Deng, H ;
Deng, Q ;
Campbell, JC .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :252-254
[4]   Coupled-cavity resonant photodetectors for high-performance wavelength demultiplexing applications [J].
Hu, SY ;
Hegblom, ER ;
Coldren, LA .
APPLIED PHYSICS LETTERS, 1997, 71 (02) :178-180
[5]   Selective wet etching of InGaAs/InGaAsP in HCl/HF/CrO3 solution:: Application to vertical taper structures in integrated optoelectronic devices [J].
Huang, H ;
Wang, XY ;
Ren, XM ;
Wang, Q ;
Huang, YQ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04) :1650-1653
[6]   Low-temperature InP/GaAs wafer bonding using sulfide-treated surface [J].
Huang, H ;
Ren, XM ;
Wang, XY ;
Wang, Q ;
Huang, YQ .
APPLIED PHYSICS LETTERS, 2006, 88 (06)
[7]   Long wavelength resonant cavity photodetector based on InP/air-gap Bragor reflectors [J].
Huang, H ;
Huang, YQ ;
Wang, XY ;
Wang, Q ;
Ren, XM .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (01) :245-247
[8]   Ultra-narrow spectral linewidth photodetector based on taper cavity [J].
Huang, H ;
Huang, YQ ;
Ren, XM .
ELECTRONICS LETTERS, 2003, 39 (01) :113-115
[9]   RESONANT CAVITY-ENHANCED (RCE) PHOTODETECTORS [J].
KISHINO, K ;
UNLU, MS ;
CHYI, JI ;
REED, J ;
ARSENAULT, L ;
MORKOC, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (08) :2025-2034
[10]   RCE photodetectors based on VCSEL structures [J].
Knödl, T ;
Choy, HKH ;
Pan, JL ;
King, R ;
Jäger, R ;
Lullo, G ;
Ahadian, JF ;
Ram, RJ ;
Fonstad, CG ;
Ebeling, KJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (10) :1289-1291