Amorphous Si/Au wafer bonding

被引：17

作者：

Chen, P. H. ^{[1
]}

Lin, C. L.

Liu, C. Y.

机构：

[1] Natl Cent Univ, Dept Chem & Mat Engn, Jhongli 32001, Taiwan

[2] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli 32001, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期

关键词：

D O I：

10.1063/1.2719025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si/Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si/Au bonding interface, but were usually found at the crystal Si/Au bonding interface. The uniform liquid eutectic Au-Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si/Au bonding process enables the feasibility of eutectic Au/Si bonding for wafer bonding applications. (c) 2007 American Institute of Physics.

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页数：3

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