Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

被引：21
作者：
Liu, Shiying [1 ,2 ]
Peng, Sunjuan [1 ,2 ]
Ma, Jun [1 ,2 ]
Li, Guojian [1 ]
Qin, Xuesi [1 ,2 ]
Li, Mengmeng [1 ,2 ]
Wang, Qiang [1 ]
机构：
[1] Northwestern Univ, Key Lab Elect Proc Mat, Minist Educ, Shenyang 110819, Peoples R China
[2] Northwestern Univ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 104卷
关键词：
Thin films; Thermoelectric materials; High magnetic field; ZnO; Oxidation; OXIDE THIN-FILMS; VAPOR-DEPOSITION; ELECTRICAL-PROPERTIES; CRYSTAL ORIENTATION; OPTICAL-PROPERTIES; IMPOSITION;
D O I：
10.1016/j.spmi.2017.02.034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (rho) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 x 10(-3) Omega.m at 210 degrees C. However, the p of the Al-doped ZnO films is less than 10(-5) Omega.m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 mu V/K and -3.415 mu V/K at 210 degrees C, respectively. Power factor reaches the maximum value (3.198 x 10(-4) W/m.K-2) at 210 degrees C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films. (C) 2017 Elsevier Ltd. All rights reserved.
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页码：282 / 290
页数：9
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