Synthesis, crystal structure and thermoelectric properties of IrSn1.5Te1.5-based skutterudites

被引:22
作者
Bos, J. W. G. [1 ]
Cava, R. J. [1 ]
机构
[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
关键词
semiconductors; chemical synthesis; crystal structure and symmetry; electronic transport;
D O I
10.1016/j.ssc.2006.09.035
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The mixed anion skutterudite IrSn1.5Te1.5 has been synthesized and characterized by X-ray powder diffraction, thermopower and electrical resistivity measurements. Structural analysis reveals that Sn and Te order in layers perpendicular to the [111] direction of the skutterudite unit cell, and a distortion of the anion sublattice is evident. The thermopower (S) is 160 mu V/K at room temperature, while the electrical resistivity (rho) is 65 m Omega cm. The effects of chemical substitutions on the Ir site (Ru, Pd) and Sn site (In, Sb) have been investigated. The power factor (S-2/rho) was found to improve with In substitution but, at 0.9 mu W/K-2 cm, is too small for this material to be useful for thermoelectric applications. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:38 / 41
页数:4
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