Impacts of Ammonia Gas Plasma Surface Treatment on Polycrystalline-Silicon Junctionless Thin-Film Transistor

被引：1

作者：

Ma, William Cheng-Yu ^{[1
]}

Luo, Shen-Ming ^{[1
]}

Tsai, Cai-Jia ^{[1
]}

Lin, Jiun-Hung ^{[1
]}

Li, Ming-Jhe ^{[1
]}

Jhu, Jhe-Wei ^{[1
]}

Chang, Ting-Hsuan ^{[1
]}

Chen, Po-Jen ^{[1
]}

Chang, Yan-Shiuan ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2021年 / 49卷 / 01期

关键词：

Plasmas; Thin film transistors; Logic gates; Passivation; Silicon; Performance evaluation; Junctionless (JL) transistor; plasma passivation; positive gate bias stress (PGBS); thin-film transistors (TFTs); ELECTRICAL-PROPERTIES; TFT; PASSIVATION;

D O I：

10.1109/TPS.2020.3010483

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The impacts of ammonia gas (NH3) plasma treatment on the performance and positive gate bias stress (PGBS) of polycrystalline-silicon (poly-Si) junctionless thin-film transistor (JL-TFT) are studied. A -0.785-V threshold voltage (V-TH) shift of JL-TFT due to the NH3 plasma treatment is observed, which is attributed to the fixed oxide charge effect of the plasma-induced interfacial layer (PIL). In addition, the transconductance of JL-TFT with the NH3 plasma treatment is enhanced by similar to 2.73 times due to the trap state passivation of grain boundaries in the poly-Si, and the ON-state current (I-ON) is enhanced by similar to 2.91 times. In addition to the performance enhancement of JL-TFT by the plasma process, the V-TH shift of poly-Si JL-TFT under PGBS is suppressed from -0.240 to -0.063 V after the plasma treatment. It is attributed to the less degradation of insulator/channel interface due to the growth of PIL by the plasma process. Moreover, the I-ON degradation of JL-TFT after PGBS is also improved from -19% to -16% after the plasma treatment. As the carrier transport of JL-TFT is the bulk conduction rather than the surface conduction of conventional inversion-mode TFT, the degradation of insulator/channel interface would exhibit less impacts on the I-ON. The improvement of performance and PGBS of JL-TFT by the NH3 plasma treatment would be beneficial to the application of 3-D integrated circuits.

引用

页码：26 / 32

页数：7

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