Refined structure of (root 3x root 3) Sb/Si(111)

被引：7
作者：
Kim, C
Walko, DA
Robinson, IK
机构：
[1] Department of Physics, Univ. of IL at Urbana-Champaign, Urbana, IL 61801
来源：
SURFACE SCIENCE | 1997年 / 388卷 / 1-3期
基金：
美国能源部;
关键词：
adatoms; antimony; low index single crystal surfaces; silicon; surface relaxation and reconstruction; X-ray scattering; diffraction; and reflection;
D O I：
10.1016/S0039-6028(97)00407-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Refined structure of (root 3x root 3) surface reconstruction induced by Sb adsorbed on Si(111) was obtained from X-ray diffraction, using a Patterson function and a least-squares lit. A wide range of reciprocal space was probed to get information for the lateral and the vertical displacements of adsorbate and the top layers of Si. The Patterson function confirms the ''milk stool'' trimer model, which, according to a least-squares fit, is centered on the T-4 site. The thermal vibration amplitudes of Sb ad-atoms and those of surface layers of Si were obtained and comparison with the values in other surfaces are made. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：242 / 247
页数：6
相关论文
共 28 条
[1]  
ABUKAWA T, 1988, SURF SCI LETT, V201, P513
[2]   THERMAL AMPLITUDES OF SURFACE ATOMS ON SI(111) 2X1 AND SI(001) 2X1 [J].
ALERHAND, OL ;
JOANNOPOULOS, JD ;
MELE, EJ .
PHYSICAL REVIEW B, 1989, 39 (17) :12622-12629
[3]  
[Anonymous], 1991, HDB SYNCHROTRON RAD
[4]  
[Anonymous], UNPUB
[5]   THE INTERACTION OF SB4 MOLECULAR-BEAMS WITH SI(100) SURFACES - MODULATED-BEAM MASS-SPECTROMETRY AND THERMALLY STIMULATED DESORPTION STUDIES [J].
BARNETT, SA ;
WINTERS, HF ;
GREENE, JE .
SURFACE SCIENCE, 1986, 165 (2-3) :303-326
[6]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[7]   APPARATUS FOR X-RAY-DIFFRACTION IN ULTRAHIGH-VACUUM [J].
FUOSS, PH ;
ROBINSON, IK .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 222 (1-2) :171-176
[8]   Dimer formation in monolayer antimony films deposited at room temperature on Si(100)-2 × 1 [J].
Grant, M.W. ;
Lyman, P.F. ;
Hoogenraad, J.H. ;
Seiberling, L.E. .
Surface Science, 1992, 279 (1-2)
[9]   ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY [J].
HAMERS, RJ ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1988, 60 (24) :2527-2530
[10]   ADSORBATE STRUCTURE AND SUBSTRATE RELAXATION FOR THE SB/SI(001)-(2X1) SURFACE [J].
LYMAN, PF ;
QIAN, Y ;
BEDZYK, MJ .
SURFACE SCIENCE, 1995, 325 (1-2) :L385-L391
123