Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions

被引：98

作者：

Ruzmetov, Dmitry ^{[1
]}

Gopalakrishnan, Gokul ^{[1
]}

Deng, Jiangdong ^{[2
]}

Narayanamurti, Venkatesh ^{[1
]}

Ramanathan, Shriram ^{[1
]}

机构：

[1] Harvard Univ, Harvard Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Harvard Univ, Ctr Nanoscale Syst, Cambridge, MA 02138 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 08期

关键词：

VO2; THIN-FILMS; MOTT TRANSITION; DIOXIDE; DOMAINS; DEVICES; STRAIN; PULSE; FIELD;

D O I：

10.1063/1.3245338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

200 nm diameter Au contacts were fabricated by e-beam lithography on sputtered thin film vanadium oxide grown on conducting substrates and current perpendicular to plane electron transport measurements were performed with a conducting tip atomic force microscope. Sharp jumps in electric current were observed in the I-V characteristics of the nano-VO(2) junctions and were attributed to the manifestation of the metal-insulator transition. The critical field and dielectric constant were estimated from quantitative analysis of the current-voltage relationship and compared with reported values on micrometer and larger size scale devices. These results are of potential relevance to novel oxide electronics utilizing metal-insulator transitions. (C) 2009 American Institute of Physics. [doi:10.1063/1.3245338]

引用

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