Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

被引：49

作者：

Charash, R. ^{[1
]}

Maaskant, P. P. ^{[1
]}

Lewis, L. ^{[1
]}

McAleese, C. ^{[2
]}

Kappers, M. J. ^{[2
]}

Humphreys, C. J. ^{[2
]}

Corbett, B. ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

All Open Access; Green;

D O I：

10.1063/1.3244203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well. (C) 2009 American Institute of Physics. [doi:10.1063/1.3244203]

引用

页数：3

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