Ultrafast photoluminescence dynamics of biexcitons in a CuCl thin film grown by vacuum deposition

被引:4
作者
Nakayama, M. [1 ]
Wakaiki, S. [1 ]
Mizoguchi, K. [1 ]
Kim, D. [1 ]
Ichida, H. [2 ]
Kanematsu, Y. [2 ]
机构
[1] Osaka City Univ, Dept Appl Phys, Grad Sch Engn, Sumiyoshi Ku, Osaka 5588585, Japan
[2] Osaka Univ, Ctr Adv Sci & Innovat, Venture Business Lab, Suita, Osaka 5650871, Japan
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 10 | 2006年 / 3卷 / 10期
基金
日本学术振兴会;
关键词
D O I
10.1002/pssc.200672146
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have investigated the ultrafast dynamics of the biexciton photoluminescence (PL) in a 500-nm thick CuCl thin film at 10 K using an optical Kerr gating method with a time resolution of similar to 1 ps. The CuCl thin film was grown by vacuum deposition. It is found that the biexciton-PL intensity has an excitation-power dependent rise time, which reflects the formation process of biexcitons, while its decay time is independent of the excitation power: 6.0 ps that is dominated by the transit time of the exciton polaritons travelling through the thin film. Furthermore, from the time-resolved PL spectra of the biexciton, we have observed a peak shift as a function of time, which is connected with the heating and cooling processes of the effective temperature in the excitonic system. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:3464 / +
页数:2
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