A comparative approach on One-Dimensional ZnO nanowires for morphological and structural properties

Zinc oxide (ZnO) nanowires were grown onto ZnO-seeded substrates by using the chemical bath deposition technique. The deposition time of ZnO seed layers and annealing temperature were varied to investigate their effect on the grown nanowires. The deposition of ZnO seed layers was carried out at 30- and 60-minutes using the radio frequency (RF) magnetron sputter technique. A conventional oven was optimized and compared with a microwave oven to grow ZnO nanowires using the chemical bath deposition (CBD) method. Results revealed that when the deposition time of the ZnO seed layer was increased from 30 to 60 min, the diameter of the grown ZnO nanowires increased from 53.7 to 136.3 nm, respectively. However, no significant change was noticed on the length of the grown ZnO nanowires. Besides, the annealing treatment for the deposited seed layers promoted better ZnO nanowires crystallinity. Interestingly, optimum ZnO nanowires properties were achieved with the ZnO seed layer prepared at a deposited at of 30 min. This work introduced a comparative study on optimizing the preparation approaches and parameters for the growth of well-aligned, high crystallinity ZnO nanowires as a suitable candidate for electrical and optical applications.