Germanium-on-glass near-infrared detectors

被引：4

作者：

Colace, L. ^{[1
,2
]}

Sorianello, V. ^{[1
,2
]}

De Iacovo, A. ^{[1
,2
]}

Fulgoni, D. ^{[3
]}

Nash, L. ^{[3
]}

Assanto, G. ^{[1
,2
]}

机构：

[1] Univ Roma Tre, CNISM, NooEL Nonlinear Opt & OptoElect Lab, I-00146 Rome, Italy

[2] Univ Roma Tre, Dept Elect Engn, I-00146 Rome, Italy

[3] AdvanceSis Ltd, Barclays Venture Ctr, Coventry CV4 7EZ, W Midlands, England

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 19期

关键词：

10;

D O I：

10.1049/el.2009.1647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge-on-glass photodetectors is fabricated by wafer bonding and layer splitting, followed by the epitaxial growth of pn structures. The detectors exhibit a remarkably low dark current density of 50 mu A/cm(2) at 1 V reverse bias and responsivities as high as 0.33 and 0.43 A/W at 1.52 and 1.3 mu m, respectively. This approach can be readily extended to other substrates, enabling the integration of Ge on different platforms.

引用

页码：994 / 995

页数：2

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