Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

被引：17

作者：

Natsui, M. ^{[1
]}

Tamakoshi, A. ^{[1
]}

Honjo, H. ^{[1
]}

Watanabe, T. ^{[1
]}

Nasuno, T. ^{[1
]}

Zhang, C. ^{[1
]}

Tanigawa, T. ^{[1
]}

Inoue, H. ^{[1
]}

Niwa, M. ^{[1
]}

Yoshiduka, T. ^{[1
]}

Noguchi, Y. ^{[1
]}

Yasuhira, M. ^{[1
]}

Ma, Y. ^{[1
]}

Shen, H. ^{[1
]}

Fukami ^{[1
]}

Sato, H. ^{[1
]}

Ikeda, S. ^{[1
]}

Ohno, H. ^{[1
]}

Endoh, T. ^{[1
]}

Hanyu, T. ^{[1
]}

机构：

[1] Tohoku Univ, Sendai, Miyagi, Japan

来源：

2020 IEEE SYMPOSIUM ON VLSI CIRCUITS | 2020年

关键词：

RAM; spin-orbit-torque; dual-port; spintronics;

D O I：

10.1109/vlsicircuits18222.2020.9162774

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We demonstrate an SOT-MRAM, a nonvolatile memory using spin-orbit-torque (SOT) devices that have a read-disturbance-free characteristic. The SOT-MRAM fabricated by a 55-nm CMOS process achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under a magnetic-field-free condition. The SOT-MRAM is also implemented in a dual-port configuration utilizing three-terminal structure of the device, which realizes a wide bandwidth applicable to high-speed applications.

引用

页数：2