The magnetoresistance contribution to the total magnetoimpedance of thin films:: a simple model and experimental basis

被引:10
作者
Kurlyandskaya, GV
Barandiaran, JM
Vázquez, M
García, D
Gutiérrez, J
Vas'kovskiy, VO
Lepalovskij, VN
机构
[1] Univ Basque Country, Dept Elect & Elect, UPV EHU, E-48080 Bilbao, Spain
[2] CSIC, Inst Ciencia Mat, Madrid 28230, Spain
[3] UCM, RENFE, Inst Magnet Aplicado, Madrid 28230, Spain
[4] USU, Inst Phys & Appl Math, Ekaterinburg 620083, Russia
关键词
thin films; magnetoresistance; magnetoimpedance; magnetisation processes;
D O I
10.1016/S0304-8853(00)00206-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetoimpedance and magnetoresistance effects have been examined in a 1 mu m Fe19Ni81 film. Noticeable longitudinal (similar to 1%) and transverse (similar to 2%) magnetoimpedance have been observed in the frequency range 20-25 MHz. A comparison between magnetoimpedance and magnetoresistance measurements leads us to conclude that magnetoresistance notably contributes to the magnetoimpedance and its hysteretic behaviour in a low-frequency limit, (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:516 / 518
页数:3
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