Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

被引：36

作者：

Poli, Stefano ^{[1
]}

Pala, Marco G. ^{[2
]}

机构：

[1] Univ Bologna, Adv Res Ctr Elect Syst, I-40122 Bologna, Italy

[2] Grenoble INP, Minatec, IMEP LAHC, UMR CNRS UJF 5130, F-38016 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 11期

关键词：

Low-field mobility; nonequilibrium Green's function; quasi-ballistic transport; silicon nanowire (SiNW); BACKSCATTERING COEFFICIENT; APPARENT MOBILITY; SURFACE-ROUGHNESS; TRANSPORT; SI; EXTRACTION;

D O I：

10.1109/LED.2009.2031418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the role of two main scattering mechanisms responsible for mobility degradation in ultrashort electron devices like silicon-nanowire FETs. We consider electron-phonon interaction and surface roughness (SR) at the Si/SiO2 interface as sources of inelastic and elastic scatterings. We address a full-quantum treatment within the nonequilibrium Green's function formalism, which allows us to take quantum confinement, quantum-phase interference, out of equilibrium, and quasi-ballistic transport into account. Our results show that both phonon- and SR-limited mobilities strongly depend on the channel length due to the importance of nonuniform scattering in ultrashort devices and contribute to understand the strong mobility reduction of decananometric devices.

引用

页码：1212 / 1214

页数：3

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