Simulation of the point defect diffusion and growth condition for defect free Cz silicon crystal

We determined the thermal equilibrium concentrations (C-V(eq), C-I(eq)) and diffusion coefficients (D-V, D-I) of self-interstitial (I) and vacancy (V) in silicon crystal by examining the behavior of grown-in defects in Czochralski grown crystals. Grown-in defects in silicon crystals are formed by the aggregation of excess vacancies or self-interstitials. Thus, under a growth condition neutral for vacancy and a self-interstitial, an ideal silicon crystal without grown-in defects is produced Using our thermophysical parameters for point defects, we examined the growth condition under winch point defects become neutral at all positions along the radial direction of a crystal. We found that this condition is dependent on two factors (i.e., the temperature gradient at the crystal periphery and the shape of the crystal-melt interface) and can be optimized by combining these factors in prescribed ways.