Localization of He induced nanovoids in buried Si1-xGex thin films

被引：10

作者：

D'Angelo, D. ^{[1
,2
]}

Mirabella, S. ^{[1
,2
]}

Bruno, E. ^{[1
,2
]}

Terrasi, A. ^{[1
,2
]}

Bongiorno, C. ^{[3
]}

Giannazzo, F. ^{[3
]}

Raineri, V. ^{[3
]}

Bisognin, G. ^{[4
,5
]}

Berti, M. ^{[4
,5
]}

机构：

[1] Catania Univ, Deipartimento Fis & Astron, I-95123 Catania, Italy

[2] Catania Univ, CNR, INFM, MATIS, I-95123 Catania, Italy

[3] CNR, IMM, I-95121 Catania, Italy

[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[5] Catania Univ, CNR, INFM, MATIS, I-95123 Catania, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 01期

关键词：

D O I：

10.1063/1.2826994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The localization of voids in thin Si1-xGex layers after He+ implantation and thermal annealing is reported. A Si/Si1-xGex multilayer grown onto (001) Si was implanted with He+ in the 10-30 keV range, with fluences from 7 X 10(15) up to 1 X 10(16) cm(-2) h. Samples were analyzed by transmission electron microscopy, showing void formation only within the two layers containing Ge or at the film/substrate interface. Our results support the idea that the compressive strain in the Si1-xGex layers induces the nucleation of small cavities and the growth of voids by a mechanism where vacancies are stabilized by He. (c) 2008 American Institute of Physics.

引用

页数：3

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