Room-temperature ferromagnetism of cu-implanted GaN

被引：60

作者：

Lee, Jong-Han

Choi, In-Hoon

Shin, Sangwon

Lee, Sunggoo

Lee, J.

Whang, Chungnam

Lee, Seung-Cheol

Lee, Kwang-Ryeol

Baek, Jong-Hyeob

Chae, Keun Hwa

Song, Jonghan

机构：

[1] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea

[2] Korea Inst Sci & Technol, Mat Sci & Engn Div, Seoul 130650, South Korea

[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[4] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[5] Korea Inst Sci & Technol, Future Technol Res Div, Seoul 130650, South Korea

[6] Korea Photon Technol Inst, LED Device Team, Kwangju 500460, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 03期

关键词：

D O I：

10.1063/1.2431765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1 MeV Cu2+ ion was implanted into GaN with a dose of 1x10(17) cm(-2) at room temperature. After implantation, the samples were subsequently performed by rapid thermal annealing at 700, 800, and 900 degrees C for 5 min. Both nonmagnetic Cu ion implanted samples annealed at 700 and 800 degrees C exhibit the ferromagnetism at room temperature, and the saturation magnetization of these samples is estimated to be 0.057 mu(B) and 0.27 mu(B) per Cu atom from M-H curve, respectively. However, the sample annealed at 900 degrees C does not show ferromagnetism due to clustering of Cu during the annealing process. (c) 2007 American Institute of Physics.

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页数：3

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