Preparation of ZnO substrates for epitaxy:: Structural, surface, and electrical properties

被引：46
作者：
Graubner, S.
Neumann, C.
Volbers, N.
Meyer, B. K.
Blaesing, J.
Krost, A.
机构：
[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany
[2] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期
关键词：
D O I：
10.1063/1.2434170
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors investigate the influence of a high temperature annealing in O-2 atmosphere on the structural properties of ZnO substrates. Only at temperatures above 1100 degrees C are atomic step heights and terraces seen by atomic force microscopy. The structural properties of the substrates were determined from the full width at half maximum (FWHM) of the rocking curve of the (0002) reflection. The FWHM is between 28 and 33 arc sec for different substrates cut from one ingot but does not change with the annealing. The electrical properties, however, change from highly resistive to n-type conductive, which makes the substrates suitable for top-to-bottom contacting. (c) 2007 American Institute of Physics.
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