Electron-phonon correlation effects in molecular transistors

被引:23
作者
Balseiro, C. A. [1 ]
Cornaglia, P. S.
Grempel, D. R.
机构
[1] Comis Nacl Energia Atom, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[2] Ecole Polytech, CNRS, Ctr Phys Theor, F-91128 Palaiseau, France
[3] Comis Nacl Energia Atom, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[4] CEA Saclay, DSM, DRECAM, SPCSI, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1103/PhysRevB.74.235409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interplay of electron-electron and electron-phonon interactions is studied analytically in the Kondo regime. A Holstein electron-phonon coupling is shown to produce a weakening of the gate voltage dependence of the Kondo temperature and may explain the observed anomalies in some of these devices. A molecular center-of-mass mode opens a new channel for charge and spin fluctuations and in the antiadabatic limit the latter are described by an asymmetric two-channel Kondo model. Below the Kondo temperature the system develops a dynamical Jahn-Teller distortion and a low energy peak emerges in the phonon spectral density that could be observed in Raman microscopy experiments.
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页数:5
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