Production yield of rare-earth ions implanted into an optical crystal

被引：21

作者：

Kornher, Thomas ^{[1
]}

Xia, Kangwei ^{[1
]}

Kolesov, Roman ^{[1
]}

Kukharchyk, Nadezhda ^{[2
]}

Reuter, Rolf ^{[1
]}

Siyushev, Petr ^{[3
]}

Stoehr, Rainer ^{[1
,4
]}

Schreck, Matthias ^{[5
]}

Becker, Hans-Werner ^{[6
]}

Villa, Bruno ^{[1
]}

Wieck, Andreas D. ^{[2
]}

Wrachtrup, Joerg ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 3, D-70569 Stuttgart, Germany

[2] Ruhr Univ Bochum, Angew Festkorperphys, D-44780 Bochum, Germany

[3] Univ Ulm, Inst Quantenopt, D-89081 Ulm, Germany

[4] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada

[5] Univ Augsburg, Expt Phys 4, D-86159 Augsburg, Germany

[6] Ruhr Univ Bochum, RUBION, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 05期

关键词：

SPINS; STATES;

D O I：

10.1063/1.4941403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rare-earth (RE) ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%. Such high implantation yield indicates a feasibility of creation of nanopatterned rare-earth doping and suggests strong potential of RE species for on-chip photonic devices. (C) 2016 AIP Publishing LLC.

引用

页数：4

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