Fe3-xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor

被引：84

作者：

Takaobushi, Junichi

Tanaka, Hidekazu

Kawai, Tomoji

Ueda, Shigenori

Kim, Jung-Jin

Kobata, Masaaki

Ikenaga, Eiji

Yabashi, Makina

Kobayashi, Keisuke

Nishino, Yoshinori

Miwa, Daigo

Tamasaku, Kenji

Ishikawa, Tetsuya

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[2] JASRI, Sayo, Hyogo 6795198, Japan

[3] RIKEN, Sayo, Hyogo 6795148, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 24期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2405389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial ferri(ferro)magnetic Fe3-xZnxO4 thin films (x=0-0.9) were prepared using a pulsed-laser deposition technique. The electrical conductivity and magnetic properties of Fe3-xZnxO4 thin film were systematically modulated for the entire range of Zn substitution. Anomalous Hall coefficient measurements revealed the presence of spin-polarized carriers at room temperature. Valence band spectra obtained by hard x-ray photoemission spectroscopy revealed that the density of states near the Fermi level was reduced with an increasing Zn concentration of x. These results indicate that this system will serve as a tunable ferromagnetic semiconductor with a strong electron correlation. (c) 2006 American Institute of Physics.

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