Annealing effect on properties of ZnO thin films grown on LiNbO3 substrates by MOCVD

被引：19
作者：
Wang, YZ
Wang, HL
Li, SZ
Zhou, SM
Hang, Y
Xu, J
Ye, JD
Gu, SL
Zhang, R
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[4] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 284卷 / 3-4期
关键词：
annealing; LiNbO3; PL; XRD; MOCVD; ZnO thin films;
D O I：
10.1016/j.jcrysgro.2005.07.031
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
ZnO films were grown on (0 0 0 1) LiNbO3 substrates by metal organic chemical vapor deposition (MOCVD). Annealing of ZnO films was performed in air for I h at 800 degrees C. The effects of annealing on the structural and optical properties of ZnO thin films on LiNbO3 substrates were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD patterns and AFM showed that the as-grown and the annealed ZnO films grown on LiNbO3 substrates had c-axis preferential orientation, the crystallinity of the ZnO films grown on LiNbO3 Substrates was improved, and the grain size increased by annealing. The PL spectra showed that the intensity of the UV near-band-edge peak was increased after annealing, while the intensity of visible peak (deep-level emission) decreased. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：319 / 323
页数：5
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