Single electron spintronics

被引:17
作者
Dempsey, Kari J. [1 ]
Ciudad, David [1 ]
Marrows, Christopher H. [1 ]
机构
[1] Univ Leeds, Sch Phys & Astron, Leeds LS2 9JT, W Yorkshire, England
来源
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2011年 / 369卷 / 1948期
基金
英国工程与自然科学研究理事会;
关键词
spintronics; nanomagnetism; nanoelectronics; MAGNETO-COULOMB OSCILLATIONS; SPIN-POLARIZED ELECTRONS; ROOM-TEMPERATURE; TUNNEL-JUNCTIONS; MAGNETORESISTANCE OSCILLATIONS; ENHANCED MAGNETORESISTANCE; GIANT MAGNETORESISTANCE; BLOCKADE; TRANSPORT; ACCUMULATION;
D O I
10.1098/rsta.2011.0105
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.
引用
收藏
页码:3150 / 3174
页数:25
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