Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon (vol 80, pg 4395, 2002)

被引：0

|

作者：

Schmidt, J ^{[1
]}

Bothe, K ^{[1
]}

Hezel, R ^{[1
]}

机构：

[1] ISFH, D-31860 Emmerthal, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 21期

关键词：

D O I：

10.1063/1.1524028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4082 / 4082

页数：1

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