Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon (vol 80, pg 4395, 2002)

被引：0
|
作者：
Schmidt, J [1 ]
Bothe, K [1 ]
Hezel, R [1 ]
机构：
[1] ISFH, D-31860 Emmerthal, Germany
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 21期
关键词：
D O I：
10.1063/1.1524028
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4082 / 4082
页数：1
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