The Parameters Affecting Graphene Conductivity for Sensor and High-Frequency Application

In this paper, we simulated the ac-conductivity equation of graphene and discussed various parameter effects on graphene conductivity in gigahertz and terahertz region for sensing and high-frequency application. We discussed the adsorb charge mechanism which creates the n-type and p-type doping in intrinsic graphene and shifts the Fermi level away from the Dirac point. We increase the carrier concentration from 1.3 * 10(13) cm(-2) to 2.2 * 10(13) cm(-2) which increased the real part of conductivity from 0.049 to 0.064 S, similarly when the relaxation time varied from 1 to 1.2 ps the real part conductivity increases from 0.049 to 0.059 S (till gigahertz frequency); this alteration is the key for sensing application. The effect of small temperature variation shows a non-distensible change in conductivity with the simulated equation although its effect and application are discussed in detail. The calculation shows dispersionless behavior of the conductivity till the gigahertz frequency. In the terahertz region, the real and imaginary part of conductivity varies with frequency which offers dynamic control of tuning the antenna for high-speed data rate at such a higher frequency where the meta-based antenna suffers.