Circular polarization from a nonmagnetic p-i-n resonant tunneling diode

被引:17
作者
de Carvalho, H. B. [1 ]
Brasil, M. J. S. P.
Gobato, Y. Galvao
Marques, G. E.
Galeti, H. V. A.
Henini, M.
Hill, G.
机构
[1] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazil
[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[4] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
基金
英国工程与自然科学研究理事会; 巴西圣保罗研究基金会;
关键词
D O I
10.1063/1.2472522
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors investigate the circular polarization of the electro- and photoluminescence emissions from the quantum well and contact layers of a nonmagnetic GaAs-AlAs p-i-n resonant tunneling diode under an external magnetic field. The contact emission evidences the formation of a spin polarized two-dimensional electron gas at the n-accumulation layer. The quantum well electroluminescence presents a strong sigma(-) degree of polarization, even for null Zeeman splitting energies, and a slight bias dependence. The observed circular polarization is mainly attributed to the spin polarization of the electrons injected into the quantum well from the two-dimensional electron gas. (c) 2007 American Institute of Physics.
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页数:3
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