Si-based near infrared photodetectors operating at 10 Gbit/s

被引：7
作者：
Colace, Lorenzo
Balbi, Michele
Masini, Gianlorenzo
Assanto, Gaetano
Luan, Hsin-Chiao
Kimerling, Lionel C.
机构：
[1] Univ Roma Tre, CNISM, INFM, Nonlinear Opt & Optoelect Lab, I-00146 Rome, Italy
[2] Univ Roma Tre, Dept Elect Engn, I-00146 Rome, Italy
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
JOURNAL OF LUMINESCENCE | 2006年 / 121卷 / 02期
关键词：
near-infrared photodetectors; germanium;
D O I：
10.1016/j.jlumin.2006.08.044
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C followed by thermal annealing at 900 degrees C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2A/W at 1.3 and 1.55 mu m, respectively, as well as open-eye diagrams at 10 Gbit/s. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：413 / 416
页数：4
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