Raman spectroscopy of wurtzite InN films grown on Si

被引：28

作者：

Agulló-Rueda, F ^{[1
]}

Mendez, EE

Bojarczuk, B

Guha, S

机构：

[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

[2] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11794 USA

[3] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 115卷 / 01期

关键词：

semiconductors; epitaxy; crystal structure and symmetry; phonons; inelastic light scattering;

D O I：

10.1016/S0038-1098(00)00132-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 degrees C. The Raman spectra show well defined peaks at 443, 475, 491 and 591 cm(-1) which correspond to the A(1)(TO), E-1(TO), E-2(high), A(1)(LO) phonons of the wurtzite structure, respectively. In backscattering normal to the surface the A(1)(TO) and E-1(TO) peaks are very weak, indicating that the films grow along the hexagonal c-axis. For a growth temperature of 500 degrees C, the E-2(high) peak has a full width at half maximum of 7 cm(-1), which is comparable to the value reported for wurtzite InN films grown on sapphire. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：19 / 21

页数：3

共 17 条

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