Activation transport under quantum Hall regime in HgTe-based heterostructure

被引:2
作者
Gudina, S. V. [1 ]
Neverov, V. N. [1 ]
Novik, E. G. [2 ]
Ilchenko, E. V. [1 ]
Harus, G. I. [1 ]
Shelushinina, N. G. [1 ]
Podgornykh, S. M. [1 ,3 ]
Yakunin, M. V. [1 ,3 ]
Mikhailov, N. N. [4 ,5 ]
Dvoretsky, S. A. [4 ,6 ]
机构
[1] Russian Acad Sci, MN Mikheev Inst Met Phys, Ural Branch, 18 S Kovalevskaya Str, Ekaterinburg 620137, Russia
[2] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany
[3] BN Yeltsin Ural Fed Univ, 19 Mira Str, Ekaterinburg 620002, Russia
[4] Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Siberian Branch, 13 Akad Lavrenteva Ave, Novosibirsk 630090, Russia
[5] Novosibirsk State Univ, 2 Pirogova Str, Novosibirsk 630090, Russia
[6] Natl Res Tomsk State Univ, 36 Lenina Ave, Tomsk 634050, Russia
关键词
INVERTED BAND-STRUCTURE; DENSITY-OF-STATES; MAGNETIC-FIELD; WELLS; SPIN; GAS; CONFINEMENT;
D O I
10.1063/1.4983183
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors nu of 1, 2 and 3) and the indications of the large values of the g factor (sic) 30-75 were found.
引用
收藏
页码:485 / 490
页数:6
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