Low Noise Amplifiers for 140 GHz Wide-Band Cryogenic Receivers

被引：10

作者：

Larkoski, Patricia V. ^{[1
,2
]}

Kangaslahti, Pekka ^{[3
]}

Samoska, Lorene ^{[3
]}

Lai, Richard ^{[4
]}

Sarkozy, Stephen ^{[4
]}

Church, Sarah E. ^{[1
,2
]}

机构：

[1] Stanford Univ, Stanford, CA 94305 USA

[2] Kavli Inst Particle Astrophys & Cosmol, Stanford, CA 94305 USA

[3] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[4] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年

关键词：

Astronomy; Cryogenic electronics; HEMTs; Low-noise amplifiers; MMICs; Noise measurement;

D O I：

10.1109/MWSYM.2013.6697674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report S-parameter and noise measurements for three different InP 35 nm gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 GHz. When packaged in a WR-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 dB - 3.6 dB over the 122 - 170 GHz band. One LNA was cooled to 20 K and a record low noise temperature of 46 K, or 0.64 dB noise figure, was measured at 152 GHz. These amplifiers can be used to develop receivers for instruments that operate in the 130 - 170 GHz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

引用

页数：4

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