Quantum dot intermediate band solar cell

This paper discusses the possibility of manufacturing the intermediate band solar cell (IBSC), a cell with the potential of achieving 63.2% of efficiency under concentrated sunlight, using quantum dot technology. The 0-dimensionality nature of the dots avoids electron thermalisaton between bands enhancing the possibilities for radiative recombination between bands and making possible the existence of three quasi-Fermi levels, some of the pivots the theory of the IBSC is sustained on. In this sense, it is suggested that an InGaAs/AlGaAs system could be used for band engineering the optimum bandgaps of the IBSC cell (0.71 and 1.24 eV). Dots should be about 40 Angstrom of radius, spaced in the range of 100 Angstrom and distributed in a three dimensional array. Stranski and Krastanow method is proposed as a technology for achieving this goal. The possibility of n-doping the dots is also discussed.