Photothermal Response of Photoluminescent Silicon Nanocrystals

被引：28

作者：

Regli, Sarah ^{[1
]}

Kelly, Joel A. ^{[1
]}

Shukaliak, Amber M. ^{[1
]}

Veinot, Jonathan G. C. ^{[1
]}

机构：

[1] Univ Alberta, Dept Chem, Edmonton, AB, Canada

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2012年 / 3卷 / 13期

基金：

加拿大创新基金会; 加拿大自然科学与工程研究理事会;

关键词：

SI NANOCRYSTALS; POROUS SILICON; HYDROGEN SILSESQUIOXANE; QUANTUM DOTS; NANOPARTICLES; LUMINESCENCE; CYTOTOXICITY; THERAPY; PHOTOPHYSICS; FABRICATION;

D O I：

10.1021/jz3004766

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrate that silicon nanocrystals (Si-NCs) exhibiting relatively high near-IR photoluminescent quantum yields also exhibit a notable photothermal (PT) response. The PT effect has been quantified as a function of NC size, defect concentration, and irradiating energy, suggesting that the origin of the PT response is a combination of carrier thermalization and defect mediated heating. The PT effect observed under NIR irradiation suggests that Si-NCs could find use in combined in vivo PL imaging and PT therapy.

引用

收藏

页码：1793 / 1797

页数：5

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