Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

被引：116

作者：

Aretouli, K. E. ^{[1
]}

Tsipas, P. ^{[1
]}

Tsoutsou, D. ^{[1
]}

Marquez-Velasco, J. ^{[1
]}

Xenogiannopoulou, E. ^{[1
]}

Giamini, S. A. ^{[1
]}

Vassalou, E. ^{[1
]}

Kelaidis, N. ^{[1
]}

Dimoulas, A. ^{[1
]}

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 14期

关键词：

INTEGRATED-CIRCUITS; THIN-FILMS; MOSE2;

D O I：

10.1063/1.4917422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using molecular beam epitaxy, atomically thin 2D semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures are grown on AlN(0001)/Si(111) substrates. Details of the electronic band structure of HfSe2 are imaged by in-situ angle resolved photoelectron spectroscopy indicating a high quality epitaxial layer. High-resolution surface tunneling microscopy supported by first principles calculations provides evidence of an ordered Se adlayer, which may be responsible for a reduction of the measured workfunction of HfSe2 compared to theoretical predictions. The latter reduction minimizes the workfunction difference between the HfSe2 and MoSe2 layers resulting in a small valence band offset of only 0.13 eV at the MoSe2/HfSe2 heterointerface and a weak type II band alignment. (C) 2015 AIP Publishing LLC.

引用

页数：5

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