A study of electrical characteristics for boron implantation of MBE grown HgCdTe

被引：0

作者：

Huang, GS ^{[1
]}

Ji, RB ^{[1
]}

Fang, WZ ^{[1
]}

Yang, JR ^{[1
]}

Chen, XQ ^{[1
]}

He, L ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Res Ctr Epitaxial Semicond Mat, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 1999年 / 18卷 / 01期

关键词：

MBE; HgCdTe; sheet Hall; infrared transmission spectra;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The electrical property of boron implantation of MBE grown HgCdTe and the profile of carrier concentration and mobility measured by sheet Hall were presented. After etching the epilayer to p-n junction position, the transmittance of this position was raised, which was ascribed to the high transmission of junction region.

引用

页码：19 / 22

页数：4

共 10 条

[1]

BUBLAC LO, 1987, VAC SCI TECHNOL A, V5, P3166

[2] ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT [J].