Energy gap measurement of nanostructured aluminium thin films for single Cooper-pair devices

被引：55

作者：

Court, N. A. ^{[1
]}

Ferguson, A. J. ^{[1
]}

Clark, R. G. ^{[1
]}

机构：

[1] Univ New S Wales, Ctr Excellence Quantum Comp Technol, Australian Res Council, Sydney, NSW 2052, Australia

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2008年 / 21卷 / 01期

关键词：

D O I：

10.1088/0953-2048/21/01/015013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of the superconducting gap in Al-Al(2)O(3)-Al tunnel junctions as a function of aluminium film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the small-area superconductor-insulator-superconductor tunnel junctions. In agreement with previous measurements we have observed an increase in the superconducting energy gap of aluminium with a decrease in film thickness. In addition, we find grain size in small-area films with thickness >= 10 nm has no appreciable effect on the energy gap. Finally, we utilize 7 and 30 nm films in a single Cooper-pair transistor and observe the modification of the finite bias transport processes due to the engineered gap profile.

引用

页数：5

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