Dark-Current-Blocking Mechanism in BIB Far-Infrared Detectors by Interfacial Barriers

被引：11

作者：

Pan, Changyi ^{[1
,2
,3
]}

Yin, Ziwei ^{[1
,2
,3
]}

Song, Zhiyong ^{[1
]}

Yao, Yao ^{[1
]}

Zhang, Yi ^{[1
,2
,3
]}

Hao, Jiaming ^{[1
]}

Kang, Tingting ^{[1
]}

Deng, Huiyong ^{[1
]}

Wu, Huizhen ^{[4
]}

Dai, Ning ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Zhejiang Univ, Dept Phys, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Detectors; Dark current; Impurities; Doping; Resistance; Temperature distribution; Plasma temperature; Bandgap narrowing effect; blocked impurity band (BIB); blocking mechanism; interfacial barrier; IMPURITY-BAND DETECTORS; GE; SI; PHOTORESPONSE;

D O I：

10.1109/TED.2021.3072359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricate Ge:B-blocked impurity band (BIB) far-infrared detectors using near-surface processing techniques. The current-voltage (I-V) characteristics and the energy band structure are investigated. It is found that there are three interfacial barriers in Ge:B BIB detectors due to the bandgap narrowing effect. The barrier height can be adjusted by changing the doping concentration in the contact region of BIB detectors. A new dark-current-blocking mechanism is proposed that the interfacial barriers can block the transport of carriers at low temperatures. Moreover, the greater the barrier height, the stronger the blocking effect. Utilizing this new blocking mechanism, the I-V characteristics of Ge:B BIB detectors can be better explained. By increasing the barrier heights, the dark current is reduced significantly, almost six orders of magnitude within a certain voltage range, and the working temperature is increased from the usual 4.2-10 K, which is of great significance for extending the service life of BIB detectors on outer space observation platforms. Our findings will help to better design BIB detectors and improve their performance.

引用

页码：2804 / 2809

页数：6

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