Identification of surface optical phonon in wurtzite InN epitaxial thin films by coherent phonon spectroscopy

被引:14
作者
Chang, Y-M. [1 ]
Chu, H. W.
Shen, C-H.
Gwo, S.
机构
[1] Natl Taiwan Univ, Inst Condensed Matter Sci, Taipei 106, Taiwan
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan
关键词
D O I
10.1063/1.2679358
中图分类号
O59 [应用物理学];
学科分类号
摘要
Coherent phonon spectroscopy of wurtzite InN epitaxial thin films was carried out with time-resolved second-harmonic generation technique. In addition to the bulk A(1)(LO) phonon and A(1)(LO)-plasmon coupling modes, a phonon mode at 543 cm(-1) was identified and characterized. It is found that this phonon mode is localized in the topmost few atomic layers and sensitive to surface modification. This vibration mode is described as the opposite motion between the In and N atoms along the c axis. This phonon mode is assigned to the surface optical phonon of InN. (c) 2007 American Institute of Physics.
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页数:3
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共 17 条
[1]   FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].
ARGUELLO, CA ;
ROUSSEAU, DL ;
PORTO, SPS .
PHYSICAL REVIEW, 1969, 181 (03) :1351-&
[2]   Coherent longitudinal optical phonon and plasmon coupling in the near-surface region of InN [J].
Chang, YM ;
Chuang, CT ;
Chia, CT ;
Tsen, KT ;
Lu, H ;
Schaff, WJ .
APPLIED PHYSICS LETTERS, 2004, 85 (22) :5224-5226
[3]   Observation of coherent surface optical phonon oscillations by time-resolved surface second-harmonic generation [J].
Chang, YM ;
Xu, L ;
Tom, HWK .
PHYSICAL REVIEW LETTERS, 1997, 78 (24) :4649-4652
[4]   Electronic properties of InN nanowires [J].
Cheng, GS ;
Stern, E ;
Turner-Evans, D ;
Reed, MA .
APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3
[5]   Generation and relaxation of coherent majority plasmons [J].
Cho, GC ;
Dekorsy, T ;
Bakker, HJ ;
Hovel, R ;
Kurz, H .
PHYSICAL REVIEW LETTERS, 1996, 77 (19) :4062-4065
[6]   Experimental and theoretical studies of phonons in hexagonal InN [J].
Davydov, VY ;
Emtsev, VV ;
Goncharuk, IN ;
Smirnov, AN ;
Petrikov, VD ;
Mamutin, VV ;
Vekshin, VA ;
Ivanov, SV ;
Smirnov, MB ;
Inushima, T .
APPLIED PHYSICS LETTERS, 1999, 75 (21) :3297-3299
[7]   Electronic and vibrational states in InN and InxGa1-xNsolid solutions [J].
Davydov, VY ;
Klochikhin, AA .
SEMICONDUCTORS, 2004, 38 (08) :861-898
[8]   OPTICAL PHONON MODES IN GAN AND ALN [J].
GORCZYCA, I ;
CHRISTENSEN, NE ;
BLANCA, ELPY ;
RODRIGUEZ, CO .
PHYSICAL REVIEW B, 1995, 51 (17) :11936-11939
[9]   Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature [J].
Gwo, S ;
Wu, CL ;
Shen, CH ;
Chang, WH ;
Hsu, TM ;
Wang, JS ;
Hsu, JT .
APPLIED PHYSICS LETTERS, 2004, 84 (19) :3765-3767