Impact of deposition temperature on the structural properties of CdS/Si nanoparticles for nanoelectronics

被引：11

作者：

Hussein, Emad H. ^{[1
]}

Mohammed, Nadheer J. ^{[1
]}

Al-Fouadi, Anwar H. Ali ^{[1
]}

Abbas, Khaldoon N. ^{[1
]}

Alikhan, Jasim S. ^{[1
]}

Maksimova, Ksenia ^{[2
]}

Goikhman, Alexander Yu ^{[2
]}

机构：

[1] Mustansiriyah Univ, Coll Sci, Dept Phys, Baghdad, Iraq

[2] Immanuel Kant Baltic Fed Univ, Kaliningrad, Russia

来源：

MATERIALS LETTERS | 2019年 / 254卷

关键词：

CdS nanoparticles; CdS/Si nanoheterostructures; Pulsed-laser deposition; X-ray diffraction;

D O I：

10.1016/j.matlet.2019.07.088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article demonstrates the effect of substrate temperature on the pulsed-laser deposition of cadmium sulfide nanoparticles (CdS NPs). Synthesis of CdS NPs on silicon substrates was realized at a temperature range of 150-550 degrees C. The XRD patterns confirm that CdS NPs showed a wurtzite-hexagonal phase with crystallite size changes between 15 and 24 nm. Also, the SEM images indicate that the temperature is a crucial parameter could determine the morphology of the nanoparticles. Hence, some films exhibited aggregation and cracks causing a significant degradation in the crystalline quality. The results identify that the best quality CdS NPs correspond to an optimal temperature of 450 degrees C at which the nano-heterostructures could be useful for nanoelectronic applications. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：282 / 285

页数：4

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