Non-volatile logic device based on domain-wall motion in a biaxial magnetic tunnel junction

被引：0
|
作者：
Li, Shuping [1 ]
Cai, Jialin [2 ]
Lv, Wenxing [2 ,3 ]
Zhang, Like [2 ,3 ]
Liang, Shiheng [4 ]
Zeng, Zhongming [2 ,3 ]
机构：
[1] Suzhou Ind Pk Inst Serv Outsourcing, Suzhou 215123, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Jiangsu, Peoples R China
[3] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China
[4] Hubei Univ, Fac Phys & Elect Sci, Wuhan 430062, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 02期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Domain-wall motion; Magnetic tunnel junction; Spin-transfer torque; Non-volatile logic device; PROCESSING-IN-MEMORY;
D O I：
10.35848/1347-4065/abdabc
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the non-volatile logic device based on domain-wall (DW) motion in a biaxial magnetic tunnel junction (MTJ) where the shape-induced magnetic anisotropy of the free layer is orthogonal to the easy axis of the reference layer. Different switching behaviors have been observed while applying either a magnetic field or current to reverse the MTJ. By denoting the magnetic field and current as two independent logical input, multiple logical operations such as "OR", "AND" and "NOT" have been performed in a device with different initial states. These results show that DW-based devices have the potential for future computing hardware.
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页数：5
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