Polymer-Assisted Deposition of Gallium Oxide for Thin-Film Transistor Applications

被引：16

作者：

Chen, Lin ^{[1
]}

Xu, Wangying ^{[1
]}

Liu, Wenjun ^{[1
]}

Han, Shun ^{[1
]}

Cao, Peijiang ^{[1
]}

Fang, Ming ^{[1
]}

Zhu, Deliang ^{[1
]}

Lu, Youming ^{[1
]}

机构：

[1] Shenzhen Univ, Shenzhen Key Lab Special Funct Mat, Guangdong Res Ctr Interfacial Engn Funct Mat, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 32期

基金：

中国国家自然科学基金;

关键词：

polymer-assisted deposition; GaOx; annealing temperature; dielectric; thin-film transistors; LOW-TEMPERATURE; OPTICAL-PROPERTIES; GATE DIELECTRICS; PERFORMANCE; GA2O3; GROWTH; BETA-GA2O3; LAYER; VOLTAGE; MORPHOLOGY;

D O I：

10.1021/acsami.9b10888

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the fabrication of gallium oxide (GaOx) thin films by a novel polymer-assisted deposition (PAD) method. The influence and mechanism of postannealing temperature (200-800 degrees C) on the formation and properties of GaOx thin films are investigated by complementary characterization analyses. The results indicate that solution-deposited GaOx experiences the elimination of organic residuals as well as the transformation of amorphous GaOx, to crystalline GaOx with the increase in annealing temperature. High quality GaOx, could be achieved with a smooth surface, wide band gap, and decent dielectric performance. Moreover, the solution-processed In2O3 thin-film transistors based on optimized GaOx dielectrics demonstrate outstanding electrical performance, including a low operating voltage of 5 V, a mobility of 3.09 cm(2) V-1 s(-1), an on/off current ratio of 1.8 X 10(5), and a subthreshold swing of 0.18 V dec(-1). Our study suggests that GaOx achieved by PAD shows great potential for further low-cost and high-performance optoelectronic applications.

引用

页码：29078 / 29085

页数：8

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