Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure:: Assessment of possible indium clustering

被引：150

作者：

Galtrey, Mark J.

Oliver, Rachel A.

Kappers, Menno J.

Humphreys, Colin J.

Stokes, Debbie J.

Clifton, Peter H.

Cerezo, Alfred

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ Cambridge, Dept Phys, Cambridge CB3 0HE, England

[3] Oxford NanoSci, Milton Keynes MK11 3ER, Bucks, England

[4] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2431573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InxGa1-xN/GaN multiple quantum well (MQW) structure that exhibited bright photoluminescence was examined with the three-dimensional atom probe. The quantum wells were clearly imaged and the indium fraction x measured to be 0.19 +/- 0.01, in good agreement with x-ray diffraction measurements. The distribution of indium in the MQWs was analyzed: no evidence for either high indium concentration regions or indium clustering was found, in contrast with many of the transmission electron microscopy studies in the literature. The authors conclude that indium clustering is not necessary for bright luminescence in InGaN.

引用

页数：3

共 14 条

[1] Performance of an energy-compensated three-dimensional atom probe [J].