Effects of thermal cycling on aluminum metallization of power diodes

被引：14

作者：

Brincker, M. ^{[1
]}

Pedersen, K. B. ^{[1
]}

Kristensen, P. K. ^{[1
]}

Popok, V. N. ^{[1
]}

机构：

[1] Aalborg Univ, Dept Phys & Nanotechnol, DK-9220 Aalborg, Denmark

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 9-10期

关键词：

Metallization degradation; Thermo-mechanical fatigue; Passive thermal cycling; Aluminum; THIN METAL-FILMS; SEMICONDUCTOR-DEVICES; MOSFET DEVICES; MECHANISMS;

D O I：

10.1016/j.microrel.2015.06.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reconstruction of aluminum metallization on top of power electronic chips is a well-known wear out phenomenon under power cycling conditions. However, the origins of reconstruction are still under discussion. In the current study, a method for carrying out passive thermal cycling of power diodes in a controlled environment is developed, thus eliminating possible contribution to degradation from electric current and humidity. The focus is centered on the structural changes in the top Al metallization layer of the power diodes, correlated with the change of sheet resistance. Since the atmosphere is controlled and the device is not subjected to a current load the observed degradation of metallization and corresponding increase of resistance is purely induced by thermo-mechanical stress. A correlation between number of cycles, micro-structural evolution, and sheet resistance is found and conclusions on the dominant role of thermo-mechanical stresses are achieved. Additionally, proposals are made on how the current thermal test setup can be further developed to study the role of corrosion. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：1988 / 1991

页数：4

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