Rigidity enhancement of GeO2 by Y doping for reliable Ge gate stacks

被引：0
作者：
Nishimura, Tomonori [1 ]
Tang, Xiaoyu [1 ,2 ]
Yajima, Takeaki [1 ]
Toriumi, Akira [1 ]
机构：
[1] Univ Tokyo, Tokyo, Japan
[2] Nanjing Univ, Nanjing, Peoples R China
来源：
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) | 2018年
关键词：
Germanium; GeO2; reliability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The poor reliability of GeO2/Ge stack is improved by appropriate cation (e.g. Sc or Y) doping into GeO2 and it is considered to be thanks to the enhancement of GeO2 network rigidity We discuss the impact of cation doping on structural modulation of GeO2 on Ge substrate in the thermal treatment. By doping a small amount of Y into GeO2, the crystallization of GeO2 from amorphous to alpha-quartz structure is efficiently suppressed. It is a direct evidence of modulation of GeO2 network rigidity by the cation doping.
引用
收藏
页码：196 / 198
页数：3
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