Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

被引：8

作者：

Hsu, Hsiao-Hsuan ^{[1
]}

Yen, Shiang-Shiou ^{[1
]}

Chiu, Yu-Chien ^{[1
]}

Chiou, Ping ^{[1
]}

Chang, Chun-Yen ^{[1
]}

Cheng, Chun-Hu ^{[2
]}

Lai, Yu-Chien ^{[3
]}

Chang, Chih-Pang ^{[3
]}

Lu, Hsueh-Hsing ^{[3
]}

Chuang, Ching-Sang ^{[3
]}

Lin, Yu-Hsin ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Taiwan Normal Univ, Dept Mechatron Engn, Taipei 10610, Taiwan

[3] AU Optron Corp, OLED Platform Technol Dept, Taipei, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 643卷

关键词：

InGaZnO; Compound; Crystal; Thin film transistor; DIELECTRICS; PERFORMANCE; OXIDE;

D O I：

10.1016/j.jallcom.2014.12.207

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A low off-state current of 1.6 x 10(-14) A/mu m and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 degrees C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：S187 / S192

页数：6

共 14 条

[1] Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications [J].

Chang, Vincent S. ;

Ragnarsson, Lars-Ake ;

Yu, Hong Yu ;

Aoulaiche, Marc ;

Conard, Thierry ;

Yin, KaiMin ;

Schram, Tom ;

Maes, Jan Willem ;

De Gendt, Stefan ;

Biesemans, Serge .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2738-2749

[2]

Hiroe A., 2012, SID INT S, V43, P1251

[3]

Hiroe A., 2012, SID INT S, V43, P760

[4] Development of IGZO TFTs and Their Applications to Next-Generation Flat-Panel Displays [J].

Hsieh, Hsing-Hung ;

Lu, Hsiung-Hsing ;

Ting, Hung-Che ;

Chuang, Ching-Sang ;

Chen, Chia-Yu ;

Lin, Yusin .

JOURNAL OF INFORMATION DISPLAY, 2010, 11 (04) :160-164

[5] Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate [J].

Hsu, Hsiao-Hsuan ;

Chang, Chun-Yen ;

Cheng, Chun-Hu ;

Yu, Shu-Hung ;

Su, Ching-Yuan ;

Su, Chung-Yen .

SOLID-STATE ELECTRONICS, 2013, 89 :194-197

[6] A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature [J].

Hsu, Hsiao-Hsuan ;

Chang, Chun-Yen ;

Cheng, Chun-Hu .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (06) :768-770

[7] Present status of amorphous In-Ga-Zn-O thin-film transistors [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (04)

[8]

Kamiya T, 2009, J DISP TECHNOL, V5, P462, DOI [10.1109/JDT.2009.2022064, 10.1109/JDT.2009.2034559]

[9] High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator [J].

Kim, J. B. ;

Fuentes-Hernandez, C. ;

Kippelen, B. .

APPLIED PHYSICS LETTERS, 2008, 93 (24)

[10] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

← 1 2 →