Calibrated nanoscale dopant profiling using a scanning microwave microscope

被引：71

作者：

Huber, H. P. ^{[2
]}

Humer, I. ^{[3
]}

Hochleitner, M. ^{[2
]}

Fenner, M. ^{[1
]}

Moertelmaier, M. ^{[1
]}

Rankl, C. ^{[1
]}

Imtiaz, A. ^{[4
]}

Wallis, T. M. ^{[4
]}

Tanbakuchi, H. ^{[1
]}

Hinterdorfer, P. ^{[2
]}

Kabos, P.

Smoliner, J. ^{[3
]}

Kopanski, J. J. ^{[5
]}

Kienberger, F. ^{[1
]}

机构：

[1] Agilent Technol, Santa Clara, CA 95051 USA

[2] Univ Linz, Christian Doppler Lab Nanoscop Methods Biophys, A-4040 Linz, Austria

[3] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[4] NIST, Electromagnet Div, Boulder, CO 80305 USA

[5] NIST, Semicond Measurements Div, Gaithersburg, MD 20899 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 01期

关键词：

Atomic force microscopy - Calibration - Nanotechnology - Semiconductor doping - Semiconductor junctions - Microscopes;

D O I：

10.1063/1.3672445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The scanning microwave microscope is used for calibrated capacitance spectroscopy and spatially resolved dopant profiling measurements. It consists of an atomic force microscope combined with a vector network analyzer operating between 1-20 GHz. On silicon semiconductor calibration samples with doping concentrations ranging from 10(15) to 10(20) atoms/cm(3), calibrated capacitance-voltage curves as well as derivative dC/dV curves were acquired. The change of the capacitance and the dC/dV signal is directly related to the dopant concentration allowing for quantitative dopant profiling. The method was tested on various samples with known dopant concentration and the resolution of dopant profiling determined to 20% while the absolute accuracy is within an order of magnitude. Using a modeling approach the dopant profiling calibration curves were analyzed with respect to varying tip diameter and oxide thickness allowing for improvements of the calibration accuracy. Bipolar samples were investigated and nano-scale defect structures and p-n junction interfaces imaged showing potential applications for the study of semiconductor device performance and failure analysis. (C) 2012 American Institute of Physics. [doi:10.1063/1.3672445]

引用

页数：9

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