Synthesis and Thermoelectric Properties of Bi2Se3 Nanostructures

被引：163

作者：

Kadel, K. ^{[1
]}

Kumari, Latha ^{[1
]}

Li, W. Z. ^{[1
]}

Huang, Jian Yu ^{[2
]}

Provencio, Paula P. ^{[2
]}

机构：

[1] Florida Int Univ, Dept Phys, Miami, FL 33199 USA

[2] Ctr Integrated Nanotechnol CINT, Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

基金：

美国国家科学基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; BISMUTH SELENIDE; ROOM-TEMPERATURE; THIN-FILMS; ROUTE; MERIT; SEMICONDUCTORS; TELLURIDE; NANORODS; FIGURE;

D O I：

10.1007/s11671-010-9795-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bismuth selenide (Bi2Se3) nanostructures were synthesized via solvothermal method. The crystallinity of the as-synthesized sample has been analyzed by X-ray diffraction, which shows the formation of rhombohedral Bi2Se3. Electron microscopy examination indicates that the Bi2Se3 nanoparticles have hexagonal flake-like shape. The effect of the synthesis temperature on the morphology of the Bi2Se3 nanostructures has also been investigated. It is found that the particle size increases with the synthesis temperature. Thermoelectric properties of the Bi2Se3 nanostructures were also measured, and the maximum value of dimensionless figure of merit (ZT) of 0.096 was obtained at 523 K.

引用

页码：1 / 7

页数：7

共 27 条

[1] Solvothermal synthesis of bismuth selenide nanotubes [J].