Effect of Al addition on the crystallization of a-AlxSi1-x(0.025 ≤ x ≤ 0.100) by electron-beam irradiation

被引：1

作者：

Shim, Jae-Hyun ^{[1
]}

Cho, Nam-Hee ^{[1
]}

Kim, Jin-Gyu ^{[2
]}

Kim, Youn-Joong ^{[2
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

[2] Korea Basic Sci Inst, Electron Microscopy Team, Taejon 3053333, South Korea

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2009年 / 355卷 / 48-49期

关键词：

Silicon; Crystallization; Nanocrystals; STEM/TEM; TEM/STEM; Quantum wells; wires and dots; INDUCED DEPOSITION; AMORPHOUS-SILICON; WIRES; SI;

D O I：

10.1016/j.jnoncrysol.2009.08.018

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si crystals and nano-rods were formed in Al-added amorphous Si films (a-AlxSi1-x: 0.025 <= x <= 0.100) by the irradiation of a focused electron-beam; the films were in situ heated to be kept at 400 degrees C and the current density of the electron-beam was 15.7 pA/cm(2). The size, shape, and concentration of the Si crystallites were varied sensitively with the Al content as well as the irradiation time. Under the electron-beam irradiation, crystallization occurred to produce polycrystalline phases in the a-Al0.025Si0.975 film, while rod-shaped Si nanostructures were formed in the a-Al0.050Si0.950 and a-Al0.100Si0.900 film. It is evident that the removal of Al and as a result the atomic rearrangements and/or local restructuring in the Al/a-Si film are critically affected by the electron-beam irradiation, which lead to the local crystallization and growth of Si nanocrystallites. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2339 / 2344

页数：6

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