A positron annihilation spectroscopy study of porous silicon

被引：0
|
作者：
Britkov, O. M. [1 ]
Gavrilov, S. A.
Grafutin, V. I.
Kalugin, V. V.
Ilyukhina, O. V.
Myasishcheva, G. G.
Prokop'ev, E. P.
Timoshenkov, S. P.
Funtikov, Yu. V.
机构：
[1] Moscow State Inst Elect Engn, Moscow 124498, Russia
[2] Inst Theoret & Expt Phys, Moscow 117128, Russia
来源：
HIGH ENERGY CHEMISTRY | 2007年 / 41卷 / 01期
关键词：
D O I：
10.1134/S0018143907010109
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It was shown that the spectra of angular correlation of annihilation radiation in porous silicon are approximated well by a parabola (I-p) and two Gaussians (I-g1, I-g2). The narrow Gaussian component I-g1 is most likely due to the annihilation of localized parapositronium in pores. The full width at half maximum is on the order of 0.8 mrad, a value that corresponds to the kinetic energy of an annihilating positron-electron pair (0.079 +/- 0.012 eV), and its intensity is about 1.5%. The total positronium yield in porous silicon reaches 6% in this case. The particle radius determined in the study is about 10-20 angstrom.
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页码：48 / 52
页数：5
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